rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds130930 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro device s, inc. 1 of 9 rffm8205 2.4ghz to 2.5ghz 802.11b/g/n/ac wifi front end module t he rffm8205 provides a complete integrated solution in a single front end module (fem) for wifi 802.11b/g/n/ac and bluetooth? systems. the ultra - small form factor and integrated matching greatly reduces the number of external components and layout area in the customer application. this simplifies the total front end solution by reducing the bill of materials, system fo otprint, and manufacturing cost. the rffm8205 integrates a 2.5ghz power amplifier (pa), a low noise amplifier (lna) with bypass mode, a power detector coupler for improved accuracy, an sp3t switch, and some filtering for harmonic rejection. the device is p rovided in a 2.5mm x 2.5mm x 0.40mm 16 - pin qfn package. this module meets or exceeds the rf front end needs of ieee 802.11b/g/n/ac wifi rf systems. tx pa_en gnd vcc c_rx ant bt gnd gnd rx 3 1 lna_en vcc gnd 12 c_bt 2 13 11 10 9 8 7 6 5 4 14 15 16 vcc pdet functional block diagram ordering information rffm8205 sb standard 5 - pieces sample bag rffm8205 sq standard 25 - piece sample bag rffm8205 sr standard 200 - piece sample bag rffm8205 tr7 standard 2500 - piece sample bag rffm8205 pck - 410 fully assembled evaluation board w/ 5 - piece bag package: qfn , 16 - pin, 2.5mm x 2.5 mm x 0.40mm features p out = +20dbm 802.11n 64qam mcs7 20mhz bw at 3.0% ( - 30.0db) dynamic evm compliance p out = +18.0dbm 802.11ac 256qam mcs9 40mhz bw at 1.8% ( - 35.0db) dynamic evm compliance p out = +22dbm 802.11b at spectral mask compliance input and output matched to 50 ? high level of integration supports wide voltage supply range able to meet demands of evolving wifi market applications cellular handsets mobile devices tablets consumer electronics gaming netbooks/notebooks tv/monitors/video rffm8205
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds130930 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro device s, inc. 2 of 9 absolute maximum rat ings parameter rating unit dc supply voltage (no rf applied) 6 v pa enable voltage - 0.5 to 5 vdc dc supply current 500 ma operating case temperature - 40 to +85 c storage temperature - 40 to +150 c maximum tx input power into 50 ? load for 11b/g/n/ac (no damage) +12 dbm maximum rx input power (no damage) +12 dbm moisture sensitivity msl2 caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device m ay reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit conditi on min typ max compliance 802.11b, 802.11g, 802.11n, 802.11ac operating frequency 2.412 2.484 ghz operating temperature - 10 70 oc extended operating temperature - 40 85 oc functional with reduced performance power supply v cc 3.2 3.6 4.6 v extended v cc 3 4.8 functional with reduced performance control voltage - high 2.8 v cc v pa_en , crx, cbt, lna_en control voltage - low 0 0.2 v transmit (tx - ant) t= - 10oc to +70oc, v cc = 3.0v to 4.2v, 50% duty cycle unless otherwise noted ht40 output power 17.5 18 .0 dbm t = 25oc, v cc = 3.6v dynamic evm - ht40 1.5 1.8 % - 36.5 - 3 5.0 db ht40 output power 15.5 16.0 dbm t = - 10oc to 70oc, v cc = 3.0v to 4.2v dynamic evm - ht40 1.5 1.8 % - 36.5 - 35 .0 db ht20 output power 20.0 dbm t=25oc, v cc = 3.6v dynamic evm - ht20 2. 5 3.0 % - 3 2.0 - 30 .0 db ht20 output power 17.5 dbm t = - 10oc to 70oc, v cc = 3.0v to 4.2v dynamic evm - ht20 2. 5 3.0 % - 3 2.0 - 30.5 db ht20 output power 18.0 dbm t=25oc, v cc = 3.6v dynamic evm - ht20 1. 5 1.8 % - 3 6.5 - 3 5 .0 db ht20 output power 15.5 16.0 dbm t = - 10oc to 70oc, v cc = 3.0v to 4.2v dynamic evm - ht20 1.5 1.8 % - 36.5 - 3 5 .0 db
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds130930 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by imp lication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recom mended application circuitry and specifications at any time without prior notice. 3 of 9 rffm8205 parameter specification unit conditi on min typ max transmit (tx - ant) (continued) t= - 10oc to +70oc, v cc = 3.0v to 4.2v, 50% duty cycle unless otherwise noted spectral mask ht20/ht40 output power 20.5 2 1 dbm t=25oc, v cc = 3.6v tx port return loss 15 22 db ant port return loss 10 17 db large signal gain 23.5 26 30 db t = 25oc, v cc = 3.6v 22.5 26 31 db t = - 10oc, to +70oc, v cc = 3.2v to 4.6v gain flatness - 20mhz channel - 0.25 0 0.25 db gain flatness - across band - 1 0 1 db operating current 225 ma p out = 18dbm , t=25oc, v cc = 3.6v 240 ma p out = 20dbm , t=25oc, v cc = 3.6v 235 ma p out = 16dbm, t = - 10oc to 70oc, v cc = 3.0v to 4.2v quiescent current 175 ma t = 25oc, v cc = 3.6v pa_en current 40 80 a second harmonic - 10 - 5 dbm /mhz p out = 22dbm, t = - 10oc to 70oc, v cc = 3.0v to 4.2v,measured with a standard ieee802.11b, 1mbps waveform third harmonic - 28 - 25 dbm /mhz power detector voltage 0 0.05 0.1 v p out = 0dbm (no rf) 0.25 0.35 0.5 v p out = 18.0dbm (see evaluation board schematic) 0.5 0.6 0.8 v p out = 22dbm (see evaluation board schematic) variation from 0 - 360 load pull - 1.5 1.5 db 3:1 vswr ant - rx isolation 30 32 35 db fem is operating in tx mode receive (ant - rx) - lna on t= - 10oc to +70oc, v cc = 3.0v to 4.2v unless otherwise noted gain (s21) 9 10.5 12 db t = 25oc, v cc = 3.6v 8 10.5 13 db t = - 10oc to 70oc, v cc = 3.2v to 4.2v rx gain flatness over any 20mhz bw - 0.25 0.25 db gain flatness across band - 1 1 db noise figure 2.5 3 db t = 25oc, v cc = 3.6v 2.5 3.7 db t = - 10oc to 70oc, v cc = 3.2v to 4.2v rx port return loss 10 12 20 db ant port return loss 3 4 10 db current consumption 7.5 10 13.5 ma t = 25oc, v cc = 3.6v 7 10 14.5 ma t = - 10oc to 70oc, v cc = 3.0v to 4.2v lna_en control current 30 200 500 a lna turn on time 200 500 ns receive (ant - rx) - bypass mode t= - 10oc to +70oc, v cc = 3.0v to 4.2v unless otherwise noted insertion loss 6 8 db t = 25oc, v cc = 3.6v 4 6 9 db t = - 10oc to 70oc, v cc = 3.0v to 4.2v rx port return loss 10 14 25 db ant port return loss 10 12 25 db input p1db 20 27 30 dbm
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds130930 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by imp lication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recom mended application circuitry and specifications at any time without prior notice. 4 of 9 rffm8205 parameter specification unit conditi on min typ max bluetooth tx/rx t= - 10oc to +70oc, v cc = 3.0v to 4.2v unless otherwise noted nominal input p1db 23 25 dbm t = 25oc, v cc = 3.6v insertion loss 0.3 0.8 1.1 db bt port return loss 10 18 30 db ant port return loss 10 18 30 db general specifications leakage current 0.5 10 a v cc = 4.8v, rf off, all control lines floating control line impedance - pa_en 187 k ? control line impedance - lna_en 228 k ? control line impedance - c_rx 27 m ? control line impedance - c_bt 27 m ? switch control current - high - each line 5 60 a switch control current - low - each line 0.5 10 a switching speed 100 500 ns esd - human body model 1000 v esd - charge device model 1000 v pa +tx switch turn - on time 200 500 ns 10% to 90% pa stability no spurious above - 41.25dbm/mhz maximum input power 12 dbm into 50 ? , v cc = 3.3v, 25c 12 dbm 6:1 vswr, v cc = 3.3v, 25c 5 dbm 10:1 vswr, v cc = 3.3v, 25c ruggedness 10:1 vswr at typical operating conditions transmit (tx - ant) ? 5v ht20 output power 20 dbm t = 25c; v cc = 5v dynamic evm - ht20 1.5 1.8 % - 3 6.5 - 35 .0 db ht20 output power 21 dbm t = 25c; v cc = 5v dynamic evm - ht20 2.5 3 % - 32.0 - 30 db ht40 output power 19.5 dbm t = 25c; v cc = 5v dynamic evm - ht40 1.5 1.8 % - 3 6.5 - 35 .0 db ht20, ht40 operating current 200 250 290 ma p out =20dbm ; t = 25c; v cc = 5v ht20 operating current 210 250 320 ma p out = 21dbm ; t = 25c; v cc = 5v quiescent current 170 190 250 ma t = 25c v cc = 5v gain (s21) 24 26 30 db receive (ant - rx) ? lna on -5v gain (s21) 9 10.5 12 db t = 25c v cc = 5v noise figure 2 2.5 3 db rx port return loss 10 12 25 db ant port return loss 3 4 10 db
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds130930 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by imp lication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recom mended application circuitry and specifications at any time without prior notice. 5 of 9 rffm8205 switch control logic truth table operating mode pa_en lna_en c_rx c_bt standby low low low low 802.11b/g/n/ac tx high power high low low low 802.11b/g/n/ac rx gain low high high low 802.11b/g/n/ac rx bypass low low high low bt rx/tx low low low high notes: ? pa_en and tx switch control are tied together internally. ? high = 2.8 to v cc . low = 0v to 0.2v. timing diagram level is set per the data sheet bt is low during tx and rx vcc pa_en c_rx c_bt 0.2 usec time tx rf signal transmit timing diagram power on / off sequence rx is low during tx 0.2 usec 0.2 usec 0.2 usec bt must be ?low? during tx and rx modes. apply a max of 0.4 to pin-13. apply vcc to pins 3,4, and 10 both controls must be off during transmit. the order is not critical. apply a max of 0.4v to pins 9, and 14 for transmit: apply 3.1v to pin-6 note1: rf signal for each specific mode is applied after the dc bias is applied note2: total on/off time includes from 10% of control switching to 90% of rf power note3: listed values on diagram are typical. the maximum is 0.5us for each mode lna_en rx is low during tx rf signal on time is 0.5us max. set rf input to required level.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds130930 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by imp lication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recom mended application circuitry and specifications at any time without prior notice. 6 of 9 rffm8205 applications schematic
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds130930 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by imp lication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recom mended application circuitry and specifications at any time without prior notice. 7 of 9 rffm8205 pcb patterns
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds130930 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by imp lication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recom mended application circuitry and specifications at any time without prior notice. 8 of 9 rffm8205 pin out tx pa_en gnd vcc c_rx ant bt gnd gnd rx 3 1 lna_en vcc gnd 12 c_bt 2 13 11 10 9 8 7 6 5 4 14 15 16 vcc pdet package drawing notes: 1. shaded area represents pin 1 location
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds130930 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by imp lication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recom mended application circuitry and specifications at any time without prior notice. 9 of 9 rffm8205 pin names and de scriptions pin name description 1 pdet power detector voltage for the tx path. may need external series r/shunt c to adjust voltage level and to filter rf noise. 2 gnd this pin is not connected internally and can be left floating or connected to ground. 3 vcc supply voltage for the output stage of the pa. see applications schematic for biasing and bypassing components. 4 vcc supply voltage for the first stage of the pa. see applications schematic for biasing and bypassing components. 5 tx rf input port for the 802.11b/g/n pa. inpu t is matched to 50 ? . this pin is dc blocked internally. 6 pa_en bias voltage for the pa. this pin also controls the tx switch of the sp3t. see truth table for proper settings. 7 gnd this pin is not connected internally and can be left floating or connected to ground. 8 rx rf output port for the 802.11b /g/n lna. port is matched to 50 ? . this pin is dc blocked internally. 9 lna_en control voltage for the lna. when this pin is set to a low logic state, the bypass mode is enabled. 10 vcc supply voltage for the lna. see applications schematic for biasing and bypassing components. 11 bt rf bidirectional port for blu etooth?. input is matched to 50 ? . an external dc block is required. 12 gnd this pin is not connected internally and can be left floating or connected to ground. 13 c_bt bluetooth? switch control pin. see truth table for proper level. 14 c_rx receive switch control pin. see switch truth table for proper level. 15 gnd this pin is not connected internally and can be left floating or connected to ground. 16 ant rf bidirecti onal antenna port matched to 50 ? . an external dc block is required. pkg base gnd ground connection. the backside of the package should be connected to the ground plane through a short path, i.e., pcb vias under the device are recommended.
|
